Point defect research in semiconductors has gained remarkable new momentum due to the identification of special point defects that can implement qubits and single photon emitters with unique characteristics. Indeed, these implementations are among the few alternatives for quantum technologies that may operate even at room temperature, and therefore discoveries and characterization of novel point defects may highly facilitate future solid state quantum technologies. First principles calculations play an important role in point defect research, since they provide a direct, extended insight into the formation of the defect states. In the last decades, considerable efforts have been made to calculate spin-dependent properties of point defects from first principles. The developed methods have already demonstrated their essential role in quantitative understanding of the physics and application of point defect qubits.

Controllable, partially isolated many-spin systems in semiconductors have recently gained multidisciplinary attention due to their widespread nanoscale sensing and quantum technology applications. Quantitative simulation of the dynamics and related applications of such systems is a challenging theoretical task that requires faithful description not only of the few-level systems but also their local environments. Here, we develop methods that can describe relevant relaxation processes induced by a dilute bath of nuclear and electron spins.